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یکشنبه 27 خرداد ماه سال 1386

Our exploration of thyristors begins with a device called the four-layer diode, also known as a PNPN diode, or a Shockley diode after its inventor, William Shockley. This is not to be confused with a Schottky diode, that two-layer metal-semiconductor device known for its high switching speed. A crude illustration of the Shockley diode, often seen in textbooks, is a four-layer sandwich of P-N-P-N semiconductor material:

Unfortunately, this simple illustration does nothing to enlighten the viewer on how it works or why. Consider an alternative rendering of the device's construction:

Shown like this, it appears to be a set of interconnected bipolar transistors, one PNP and the other NPN. Drawn using standard schematic symbols, and respecting the layer doping concentrations not shown in the last image, the Shockley diode looks like this:

Let's connect one of these devices to a source of variable voltage and see what happens:

With no voltage applied, of course there will be no current. As voltage is initially increased, there will still be no current because neither transistor is able to turn on: both will be in cutoff mode. To understand why this is, consider what it takes to turn a bipolar junction transistor on: current through the base-emitter junction. As you can see in the diagram, base current through the lower transistor is controlled by the upper transistor, and the base current through the upper transistor is controlled by the lower transistor. In other words, neither transistor can turn on until the other transistor turns on. What we have here, in vernacular terms, is known as a Catch-22

So how can a Shockley diode ever conduct current, if its constituent transistors stubbornly maintain themselves in a state of cutoff? The answer lies in the behavior of real transistors as opposed to ideal transistors. An ideal bipolar transistor will never conduct collector current if there is no base current, no matter how much or little voltage we apply between collector and emitter. Real transistors, on the other hand, have definite limits to how much collector-emitter voltage they can withstand before they break down and conduct. If two real transistors are connected together in this fashion to form a Shockley diode, they will be able to conduct if there is sufficient voltage applied by the battery between anode and cathode to cause one of them to break down. Once one transistor breaks down and begins to conduct, it will allow base current through the other transistor, causing it to turn on in a normal fashion, which then allows base current through the first transistor. The end result is that both transistors will be saturated, now keeping each other turned on instead of off

So, we can force a Shockley diode to turn on by applying sufficient voltage between anode and cathode. As we have seen, this will inevitably cause one of the transistors to turn on, which then turns the other transistor on, ultimately "latching" both transistors on where they will tend to remain. But how do we now get the two transistors to turn off again? Even if the applied voltage is reduced to a point well below what it took to get the Shockley diode conducting, it will remain conducting because both transistors now have base current to maintain regular, controlled conduction. The answer to this is to reduce the applied voltage to a much lower point where there is too little current to maintain transistor bias, at which point one of the transistors will cutoff, which then halts base current through the other transistor, sealing both transistors in the "off" state as they were before any voltage was applied at all

If we graph this sequence of events and plot the results on an I/V graph, the hysteresis is very evident. First, we will observe the circuit as the DC voltage source (battery) is set to zero voltage:

Next, we will steadily increase the DC voltage. Current through the circuit is at or nearly at zero, as the breakdown limit has not been reached for either transistor:

When the voltage breakdown limit of one transistor is reached, it will begin to conduct collector current even though no base current has gone through it yet. Normally, this sort of treatment would destroy a bipolar junction transistor, but the PNP junctions comprising a Shockley diode are engineered to take this kind of abuse, similar to the way a Zener diode is built to handle reverse breakdown without sustaining damage. For the sake of illustration I'll assume the lower transistor breaks down first, sending current through the base of the upper transistor:

As the upper transistor receives base current, it turns on as expected. This action allows the lower transistor to conduct normally, the two transistors "sealing" themselves in the "on" state. Full current is very quickly seen in the circuit:

The positive feedback mentioned earlier in this chapter is clearly evident here. When one transistor breaks down, it allows current through the device structure. This current may be viewed as the "output" signal of the device. Once an output current is established, it works to hold both transistors in saturation, thus ensuring the continuation of a substantial output current. In other words, an output current "feeds back" positively to the input (transistor base current) to keep both transistors in the "on" state, thus reinforcing (or regenerating) itself

With both transistors maintained in a state of saturation with the presence of ample base current, they will continue to conduct even if the applied voltage is greatly reduced from the breakdown level. The effect of positive feedback is to keep both transistors in a state of saturation despite the loss of input stimulus (the original, high voltage needed to break down one transistor and cause a base current through the other transistor):

If the DC voltage source is turned down too far, though, the circuit will eventually reach a point where there isn't enough current to sustain both transistors in saturation. As one transistor passes less and less collector current, it reduces the base current for the other transistor, thus reducing base current for the first transistor. The vicious cycle continues rapidly until both transistors fall into cutoff

Here, positive feedback is again at work: the fact that the cause/effect cycle between both transistors is "vicious" (a decrease in current through one works to decrease current through the other, further decreasing current through the first transistor) indicates a positive relationship between output (controlled current) and input (controlling current through the transistors' bases).

The resulting curve on the graph is classicly hysteretic: as the input signal (voltage) is increased and decreased, the output (current) does not follow the same path going down as it did going up

Put in simple terms, the Shockley diode tends to stay on once it's turned on, and stay off once it's turned off. There is no "in-between" or "active" mode in its operation: it is a purely on or off device, as are all thyristors

There are a few special terms applied to Shockley diodes and all other thyristor devices built upon the Shockley diode foundation. First is the term used to describe its "on" state: latched. The word "latch" is reminiscent of a door lock mechanism, which tends to keep the door closed once it has been pushed shut. The term firing refers to the initiation of a latched state. In order to get a Shockley diode to latch, the applied voltage must be increased until breakover is attained. Despite the fact that this action is best described in terms of transistor breakdown, the term breakover is used instead because the end result is a pair of transistors in mutual saturation rather than destruction as would be the case with a normal transistor. A latched Shockley diode is re-set back into its nonconducting state by reducing current through it until low-current dropout occurs

It should be noted that Shockley diodes may be fired in a way other than breakover: excessive voltage rise, or dv/dt. This is when the applied voltage across the diode increases at a high rate of change. This is able to cause latching (turning on) of the diode due to inherent junction capacitances within the transistors. Capacitors, as you may recall, oppose changes in voltage by drawing or supplying current. If the applied voltage across a Shockley diode rises at too fast a rate, those tiny capacitances will draw enough current during that time to activate the transistor pair, turning them both on. Usually, this form of latching is undesirable, and can be minimized by filtering high-frequency (fast voltage rises) from the diode with series inductors and/or parallel resistor-capacitor networks called snubbers

The voltage rise limit of a Shockley diode is referred to as the critical rate of voltage rise. Manufacturers usually provide this specification for the devices they sell

REVIEW

Shockley diodes are four-layer PNPN semiconductor devices. They behave as a pair of interconnected PNP and NPN transistors

Like all thyristors, Shockley diodes tend to stay on once they've been turned on (latched), and stay off once they've been turned off

There are two ways to latch a Shockley diode: exceed the anode-to-cathode breakover voltage, or exceed the anode-to-cathode critical rate of voltage rise

There is only one way to cause a Shockley diode to stop conducting, and that is to reduce the current going through it to a level below its low-current dropout threshold

www.allaboutcircuits.com

جمعه 18 خرداد ماه سال 1386

همانگونه که از نام این المام مشخص است، پایه کنترلی آن جریانی مصرف نمی کند و تنها با اعامل ولتاژ و ایجاد میدان درون نیمه هادی ، جریان عبوری از  FET  کنترل می شود. به همین دلیل ورودی این مدار هیچ کونه اثر بارگذاری بر روی طبقات تقویت قبلی نمی گذارد و امپدانس بسیار بالایی دارد.

فت دارای سه پایه با نامهای درِین D - سورس S  و گیت G  است که پایه گیت ، جریان عبوری از درین به سورس را کنترل می نماید. فت ها دارای دو نوع N  کانال و P  کانال هستند. در  فت نوع N  کانال زمانی که گیت نسبت به سورس مثبت باشد جریان از درین به سورس عبور می کند . FET ها معمولاً بسیار حساس بوده و حتی با الکتریسیته ساکن  بدن نیز تحریک می گردند. به همین دلیل نسبت به نویز بسیار حساس هستند.

نوع دیگر ترانزیستورهای اثر میدانی MOSFET  ها هستند ( ترانزیستور اثر میدانی اکسید فلزی نیمه هادی - Metal-Oxide Semiconductor Field Effect Transistor  )  یکی از اساسی ترین مزیت های ماسفت ها نویز کمتر آنها در مدار است.

فت ها در ساخت فرستنده باند اف ام رادیو نیز کاربرد فراوانی دارند. برای تست کردن فت کانال N  با مالتی متر ، نخست پایه گیت را پیدا می کنیم. یعنی پایه ای که نسبت به دو پایه دیگر در یک جهت مقداری رسانایی دارد و در جهت دیگر مقاومت آن بی نهایت است. معمولاً مقاومت بین پایه درین و گیت از مقاومت پایه درین و سورس بیشتر است که از این طریق می توان پایه درین را از سورس تشخیص داد.

شنبه 12 خرداد ماه سال 1386

 در این قسمت راجع به گونه های ساده اولین ترانزیستورها که از سه لایه نیمه هادی تشکیل شده اند صحبت خواهیم کرد.

بصورت استاندارد دو نوع ترانزیستور بصورت PNP و NPN داریم. انتخاب نامه آنها به نحوه کنار هم قرار گرفتن لایه های نیمه هادی و پلاریته آنها بستگی دارد. هر چند در اوایل ساخت این وسیله الکترونیکی و جایگزینی آن با لامپهای خلاء، ترانزستورها اغلب از جنس ژرمانیم و بصورت PNP ساخته می شدند اما محدودیت های ساخت و فن آوری از یکطرف و تفاوت بهره دریافتی از طرف دیگر، سازندگان را مجبور کرد که بعدها بیشتر از نیمه هادیی از جنس سیلیکون و با پلاریته NPN برای ساخت ترانزیستور استفاده کنند. تفاوت خاصی در عملکرد این دو نمونه وجود ندارد و این بدان معنی نیست که ترانزیستور ژرمانیم با پلاریته NPN یا سیلیکون با پلاریته PNP وجود ندارد.

 

Transistor Junction
نمای واقعی تری از پیوندها در یک ترانزیستور که تفاوت کلکتور و امیتر را بوضوح نشان می دهد.

برای هریک از لایه های نیمه هادی که در یک ترانزیستور وجود دارد یک پایه در نظر گرفته شده است که ارتباط مدار بیرونی را به نیمه هادی ها میسر می سازد. این پایه ها به نامهای Base (پایه) ، Collector (جمع کننده) و Emitter (منتشر کننده) مشخص می شوند. اگر به ساختار لایه ای یک ترانزیستور دقت کنیم بنظر تفاوت خاصی میان Collector و Emitter دیده نمی شود اما واقعیت اینگونه نیست. چرا که ضخامت و بزرگی لایه Collector به مراتب از Emitter بزرگتر است و این عملا" باعث می شود که این دو لایه با وجود تشابه پلاریته ای که دارند با یکدیگر تفاوت داشته باشند. با وجود این معمولا" در شکل ها برای سهولت این دو لایه را بصورت یکسان در نظر میگیردند.

بدون آنکه در این مطلب قصد بررسی دقیق نحوه کار یک ترانزیستور را داشته باشیم، قصد داریم ساده ترین مداری که می توان با یک ترانزیستور تهیه کرد را به شما معرفی کرده و کاربرد آنرا برای شما شرح دهیم. به شکل زیر نگاه کنید. 

Transistor Circuit 
مدار ساده (مدار امیتر مشترک) برای آشنایی با طرز کار یک ترانزیستور

بطور جداگانه بین E و C و همچنین بین E و B منابع تغذیه ای قرار داده ایم. مقاومت ها یی که در مسیر هریک از این منابع ولتاژ قرار دادیم صرفا" برای محدود کردن جریان بوده و نه چیز دیگر. چرا که در صورت نبود آنها، پیوندها بر اثر کشیده شدن جریان زیاد خواهند سوخت.

طرز کار ترانزیستور به اینصورت است، چنانچه پیوند BE را بصورت مستقیم بایاس (Bias به معنی اعمال ولتاژ و تحریک است) کنیم بطوری که این پیوند PN روشن شود (برای اینکار کافی است که به این پیوند حدود 0.6 تا 0.7 ولت با توجه به نوع ترانزیستور ولتاژ اعمال شود)، در آنصورت از مدار بسته شده میان E و C می توان جریان بسیار بالایی کشید. اگر به شکل دوم دقت کنید بوضوح خواهید فهمید که این عمل چگونه امکان پذیر است. در حالت عادی میان E و C هیچ مدار بازی وجود ندارد اما به محض آنکه شما پیوند BE را با پلاریته موافق بایاس کنید، با توجه به آنچه قبلا" راجع به یک پیوند PN توضیح دادیم، این پیوند تقریبا" بصورت اتصال کوتاه عمل می کند و شما عملا" خواهید توانست از پایه های E و C جریان قابل ملاحظه ای بکشید. (در واقع در اینحالت می توان فرض کرد که در شکل دوم عملا" لایه PN مربوط به BE از بین می رود و بین EC یک اتصال کوتاه رخ می دهد.)

بنابراین مشاهده می کنید که با برقراری یک جریان کوچک Ib شما می توانید یک جریان بزرگ Ic را داشته باشید. این مدار اساس سوئیچ های الکترونیک در مدارهای الکترونیکی است. بعنوان مثال شما می توانید در مدار کلکتور یک رله قرار دهید که با جریان مثلا" چند آمپری کار می کند و در عوض با اعمال یک جریان بسیار ضعیف در حد میلی آمپر - حتی کمتر - در مدار بیس که ممکن است از طریق یک مدار دیجیتال تهیه شود، به رله فرمان روشن یا خاموش شدن بدهید.

شنبه 5 خرداد ماه سال 1386

Schottky diodes

Schottky diodes are constructed of a metal-to-N junction rather than a P-N semiconductor junction. Also known as hot-carrier diodes, Schottky diodes are characterized by fast switching times (low reverse-recovery time), low forward voltage drop (typically 0.25 to 0.4 volts for a metal-silicon junction), and low junction capacitance.

The schematic symbol for a Schottky diode is shown here:

In terms of forward voltage drop (VF), reverse-recovery time (trr), and junction capacitance (CJ), Schottky diodes are closer to ideal than the average "rectifying" diode. This makes them well suited for high-frequency applications. Unfortunately, though, Schottky diodes typically have lower forward current (IF) and reverse voltage (VRRM and VDC) ratings than rectifying diodes and are thus unsuitable for applications involving substantial amounts of power.

Schottky diode technology finds broad application in high-speed computer circuits, where the fast switching time equates to high speed capability, and the low forward voltage drop equates to less power dissipation when conducting.

Tunnel diodes

Tunnel diodes exploit a strange quantum phenomenon called resonant tunneling to provide interesting forward-bias characteristics. When a small forward-bias voltage is applied across a tunnel diode, it begins to conduct current. As the voltage is increased, the current increases and reaches a peak value called the peak current (IP). If the voltage is increased a little more, the current actually begins to decrease until it reaches a low point called the valley current (IV). If the voltage is increased further yet, the current begins to increase again, this time without decreasing into another "valley." Both the schematic symbol and a current/voltage plot for the tunnel diode are shown in the following illustration:

The forward voltages necessary to drive a tunnel diode to its peak and valley currents are known as peak voltage (VP) and valley voltage (VV), respectively. The region on the graph where current is decreasing while applied voltage is increasing (between VP and VV on the horizontal scale) is known as the region of negative resistance.

Tunnel diodes, also known as Esaki diodes in honor of their Japanese inventor Leo Esaki, are able to transition between peak and valley current levels very quickly, "switching" between high and low states of conduction much faster than even Schottky diodes. Tunnel diode characteristics are also relatively unaffected by changes in temperature.

Unfortunately, tunnel diodes are not good rectifiers, as they have relatively high "leakage" current when reverse-biased. Consequently, they find application only in special circuits where their unique tunnel effect has value. In order to exploit the tunnel effect, these diodes are maintained at a bias voltage somewhere between the peak and valley voltage levels, always in a forward-biased polarity (anode positive, and cathode negative).

Perhaps the most common application of a tunnel diode is in simple high-frequency oscillator circuits, where they allow a DC voltage source to contribute power to an LC "tank" circuit, the diode conducting when the voltage across it reaches the peak (tunnel) level and effectively insulating at all other voltages.

Light-emitting diodes

Diodes, like all semiconductor devices, are governed by the principles described in quantum physics. One of these principles is the emission of specific-frequency radiant energy whenever electrons fall from a higher energy level to a lower energy level. This is the same principle at work in a neon lamp, the characteristic pink-orange glow of ionized neon due to the specific energy transitions of its electrons in the midst of an electric current. The unique color of a neon lamp's glow is due to the fact that it's neon gas inside the tube, and not due to the particular amount of current through the tube or voltage between the two electrodes. Neon gas glows pinkish-orange over a wide range of ionizing voltages and currents. Each chemical element has its own "signature" emission of radiant energy when its electrons "jump" between different, quantized energy levels. Hydrogen gas, for example, glows red when ionized; mercury vapor glows blue. This is what makes spectrographic identification of elements possible.

Electrons flowing through a PN junction experience similar transitions in energy level, and emit radiant energy as they do so. The frequency of this radiant energy is determined by the crystal structure of the semiconductor material, and the elements comprising it. Some semiconductor junctions, composed of special chemical combinations, emit radiant energy within the spectrum of visible light as the electrons transition in energy levels. Simply put, these junctions glow when forward biased. A diode intentionally designed to glow like a lamp is called a light-emitting diode, or LED.

Diodes made from a combination of the elements gallium, arsenic, and phosphorus (called gallium-arsenide-phosphide) glow bright red, and are some of the most common LEDs manufactured. By altering the chemical constituency of the PN junction, different colors may be obtained. Some of the currently available colors other than red are green, blue, and infra-red (invisible light at a frequency lower than red). Other colors may be obtained by combining two or more primary-color (red, green, and blue) LEDs together in the same package, sharing the same optical lens. For instance, a yellow LED may be made by merging a red LED with a green LED.

The schematic symbol for an LED is a regular diode shape inside of a circle, with two small arrows pointing away (indicating emitted light):

This notation of having two small arrows pointing away from the device is common to the schematic symbols of all light-emitting semiconductor devices. Conversely, if a device is light-activated (meaning that incoming light stimulates it), then the symbol will have two small arrows pointing toward it. It is interesting to note, though, that LEDs are capable of acting as light-sensing devices: they will generate a small voltage when exposed to light, much like a solar cell on a small scale. This property can be gainfully applied in a variety of light-sensing circuits.

Because LEDs are made of different chemical substances than normal rectifying diodes, their forward voltage drops will be different. Typically, LEDs have much larger forward voltage drops than rectifying diodes, anywhere from about 1.6 volts to over 3 volts, depending on the color. Typical operating current for a standard-sized LED is around 20 mA. When operating an LED from a DC voltage source greater than the LED's forward voltage, a series-connected "dropping" resistor must be included to prevent full source voltage from damaging the LED. Consider this example circuit:

With the LED dropping 1.6 volts, there will be 4.4 volts dropped across the resistor. Sizing the resistor for an LED current of 20 mA is as simple as taking its voltage drop (4.4 volts) and dividing by circuit current (20 mA), in accordance with Ohm's Law (R=E/I). This gives us a figure of 220 Ω. Calculating power dissipation for this resistor, we take its voltage drop and multiply by its current (P=IE), and end up with 88 mW, well within the rating of a 1/8 watt resistor. Higher battery voltages will require larger-value dropping resistors, and possibly higher-power rating resistors as well. Consider this example for a supply voltage of 24 volts:

Here, the dropping resistor must be increased to a size of 1.12 kΩ in order to drop 22.4 volts at 20 mA so that the LED still receives only 1.6 volts. This also makes for a higher resistor power dissipation: 448 mW, nearly one-half a watt of power! Obviously, a resistor rated for 1/8 watt power dissipation or even 1/4 watt dissipation will overheat if used here.

Dropping resistor values need not be precise for LED circuits. Suppose we were to use a 1 kΩ resistor instead of a 1.12 kΩ resistor in the circuit shown above. The result would be a slightly greater circuit current and LED voltage drop, resulting in a brighter light from the LED and slightly reduced service life. A dropping resistor with too much resistance (say, 1.5 kΩ instead of 1.12 kΩ) will result in less circuit current, less LED voltage, and a dimmer light. LEDs are quite tolerant of variation in applied power, so you need not strive for perfection in sizing the dropping resistor.

Also because of their unique chemical makeup, LEDs have much, much lower peak-inverse voltage (PIV) ratings than ordinary rectifying diodes. A typical LED might only be rated at 5 volts in reverse-bias mode. Therefore, when using alternating current to power an LED, you should connect a protective rectifying diode in series with the LED to prevent reverse breakdown every other half-cycle:

As lamps, LEDs are superior to incandescent bulbs in many ways. First and foremost is efficiency: LEDs output far more light power per watt than an incandescent lamp. This is a significant advantage if the circuit in question is battery-powered, efficiency translating to longer battery life. Second is the fact that LEDs are far more reliable, having a much greater service life than an incandescent lamp. This advantage is primarily due to the fact that LEDs are "cold" devices: they operate at much cooler temperatures than an incandescent lamp with a white-hot metal filament, susceptible to breakage from mechanical and thermal shock. Third is the high speed at which LEDs may be turned on and off. This advantage is also due to the "cold" operation of LEDs: they don't have to overcome thermal inertia in transitioning from off to on or vice versa. For this reason, LEDs are used to transmit digital (on/off) information as pulses of light, conducted in empty space or through fiber-optic cable, at very high rates of speed (millions of pulses per second).

One major disadvantage of using LEDs as sources of illumination is their monochromatic (single-color) emission. No one wants to read a book under the light of a red, green, or blue LED. However, if used in combination, LED colors may be mixed for a more broad-spectrum glow.

Laser diodes

The laser diode is a further development upon the regular light-emitting diode, or LED. The term "laser" itself is actually an acronym, despite the fact it's often written in lower-case letters. "Laser" stands for Light Amplification by Stimulated Emission of Radiation, and refers to another strange quantum process whereby characteristic light emitted by electrons transitioning from high-level to low-level energy states in a material stimulate other electrons in a substance to make similar "jumps," the result being a synchronized output of light from the material. This synchronization extends to the actual phase of the emitted light, so that all light waves emitted from a "lasing" material are not just the same frequency (color), but also the same phase as each other, so that they reinforce one another and are able to travel in a very tightly-confined, nondispersing beam. This is why laser light stays so remarkably focused over long distances: each and every light wave coming from the laser is in step with each other:

Incandescent lamps produce "white" (mixed-frequency, or mixed-color) light. Regular LEDs produce monochromatic light: same frequency (color), but different phases, resulting in similar beam dispersion. Laser LEDs produce coherent light: light that is both monochromatic (single-color) and monophasic (single-phase), resulting in precise beam confinement.

Laser light finds wide application in the modern world: everything from surveying, where a straight and nondispersing light beam is very useful for precise sighting of measurement markers, to the reading and writing of optical disks, where only the narrowness of a focused laser beam is able to resolve the microscopic "pits" in the disk's surface comprising the binary 1's and 0's of digital information.

Some laser diodes require special high-power "pulsing" circuits to deliver large quantities of voltage and current in short bursts. Other laser diodes may be operated continuously at lower power. In the latter case, laser action occurs only within a certain range of diode current, necessitating some form of current-regulator circuit. As laser diodes age, their power requirements may change (more current required for less output power), but it should be remembered that low-power laser diodes, like LEDs, are fairly long-lived devices, with typical service lives in the tens of thousands of hours.

Photodiodes

Varactor diodes

Constant-current diodes

A constant-current diode, also known as a current-limiting diode, or current-regulating diode, does exactly what its name implies: it regulates current through it to some maximum level. If you try to force more current through a constant-current diode than its current-regulation point, it simply "fights back" by dropping more voltage. If we were to build the following circuit and plot diode current over diode current, we'd get a graph that rises normally at first and then levels off at the current regulation point:

One interesting application for a constant-current diode is to automatically limit current through an LED or laser diode over a wide range of power supply voltages, like this:

Of course, the constant-current diode's regulation point should be chosen to match the LED or laser diode's optimum forward current. This is especially important for the laser diode, not so much for the LED, as regular LEDs tend to be more tolerant of forward current variations.

Another application is in the charging of small secondary-cell batteries, where a constant charging current leads to very predictable charging times. Of course, large secondary-cell battery banks might also benefit from constant-current charging, but constant-current diodes tend to be very small devices, limited to regulating currents in the milliamp range.

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سه شنبه 1 خرداد ماه سال 1386

دیودهای سیگنال
این نوع از انواع دیودها برای پردازش سیگنالهای ضعیف - معمولا" رادیویی - و کم جریان تا حداکثر حدود 100mA کاربرد دارند. معروفترین و پر استفاده ترین آنها که ممکن است با آن آشنا باشید دیود 1N4148 است که از سیلیکون ساخته شده است و ولتاژ شکست مستقیم آن 0.7 ولت است.
اما برخی از دیود های سیگنال از ژرمانیم هم ساخته می شوند، مانند OA90 که ولتاژ شکست مستقیم پایینتری دارد، حدود 0.2 ولت. به همین دلیل از این نوع دیود بیشتر برای آشکار سازی امواج مدوله شده رادیویی استفاده می شود.

Signal Diod for Protection
استفاده از دیود سیگنال در مدار رله برای جلوگیری از
ایجاد ولتاژ های ناخواسته زیاد  

بصورت یک قانون کلی هنگامی که ولتاژ شکست مستقیم دیوید خیلی مهم نباشد، از دیودهای سیلیکون استفاده می شود. دلیل آن مقاومت بهتر آنها در مقابل حرارت محیط یا حرارت هنگام لحیم کاری و نیز مقاومت الکتریکی کمتر در ولتاژ مستقیم است. همچنین دیود های سیلیکونی سیگنال معمولا" در ولتاژ معکوس جریان نشتی بسیار کمتری نسبت به نوع ژرمانیم دارند.
از کاربرد دیگری که برای دیودهای سیگنال وجود دارد می توان به استفاده از آنها برای حفاظت مدار هنگامی که رله در یک مدار الکترونیکی قرار دارد نام برد. هنگامی که رله خاموش می شود تغییر جریان در سیم پیچ آن میتواند در دوسر آن ولتاژ بسیار زیادی القا کند که قرار دادن یک دیود در جهت مناسب میتواند این ولتاژ را خنثی کند. به شکل اول توجه کنید.  

دیودهای زنر
از این دیودها برای تثبیت ولتاژ استفاده می شود. این نوع از دیود ها برای شکسته شدن با اطمینان در ولتاژ معکوس ساخته شده اند، بنابراین بدون ترس می توان آنها را در جهت معکوس بایاس کرد و از آنها برای تثبیت ولتاژ استفاده نمود. به هنگام استفاده از آنها معمولا" از یک مقاومت برای محدود کردن جریان بطور سری نیز استفاده می شود. به شکل نگاه کنید به این طریق شما یک ولتاژ رفرنس دقیق بدست آورده اید.

Zener
استفاده از دیود زنر برای تهیه ولتاژ ثابت


دیودهای زنر معمولا" با حروفی که در آنها Z وجود دارد نامگذاری می شوند مانند BZX یا BZY و ... و ولتاژ شکست آنها نیز معمولا" روی دیود نوشته می شود، مانند 4V7 که به معنی 4.7 ولت است. همچنین توان تحمل این دیود ها نیز معمولا" مشخص است و شما هنگام خرید باید آنرا به فروشنده بگویید، در بازار نوع 400mW و 1.3W آن بسیار رایج است.